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[期刊论文]
电子束蒸发二氧化硅薄膜在SI/SI_(1-X)GE_X HBT中的应用研究
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TN304
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WF:perioarticalQK199600171946
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Chinese
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Source :
半导体技术
ISSN: 1003-353X
Year: 1996
Page: 42-43,55
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ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count: -1
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30 Days PV: 2
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