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作者:

Guo, X (Guo, X.) (学者:郭霞) | Shen, GD (Shen, GD.) | Wang, GH (Wang, GH.) | Wang, XZ (Wang, XZ.) | Du, JY (Du, JY.) | Gao, G (Gao, G.) | Wang, KL (Wang, KL.)

收录:

EI Scopus SCIE

摘要:

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15degrees angle cap.

关键词:

AlGaInP high-brightness light-emitting diodes

作者机构:

  • [ 1 ] Beijing Univ Technol & Beijing Optoelect Technol, Inst Elect Engn & Informat, Beijing 100022, Peoples R China
  • [ 2 ] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

通讯作者信息:

  • 郭霞

    [Guo, X]Beijing Univ Technol & Beijing Optoelect Technol, Inst Elect Engn & Informat, Beijing 100022, Peoples R China

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来源 :

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES

ISSN: 1006-9321

年份: 2003

期: 2

卷: 46

页码: 204-208

JCR分区:3

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 3

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