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Author:

Guo, X (Guo, X.) (Scholars:郭霞) | Shen, GD (Shen, GD.) | Wang, GH (Wang, GH.) | Wang, XZ (Wang, XZ.) | Du, JY (Du, JY.) | Gao, G (Gao, G.) | Wang, KL (Wang, KL.)

Indexed by:

EI Scopus SCIE

Abstract:

In order to resolve the prevailing problems in conventional light-emitting diodes (LEDs), novel high-efficiency tunneling-regenerated multi-active-region (TRMAR) LEDs are proposed, which have such advantages as low heat generation, carrier overflow level and non-radiation recombination rate and whose quantum efficiency and the output optical power can be scaled with the number of the active regions. Experiments show that the on-axis luminous intensity of TRMAR LEDs increases linearly with the number of active regions. The novel LEDs have high quantum efficiency under low current injection and their maximum on-axis luminous intensity exceeds 5 candelas at 20 mA current injection at the peak wavelength of 625 nm with a 15degrees angle cap.

Keyword:

light-emitting diodes AlGaInP high-brightness

Author Community:

  • [ 1 ] Beijing Univ Technol & Beijing Optoelect Technol, Inst Elect Engn & Informat, Beijing 100022, Peoples R China
  • [ 2 ] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

Reprint Author's Address:

  • 郭霞

    [Guo, X]Beijing Univ Technol & Beijing Optoelect Technol, Inst Elect Engn & Informat, Beijing 100022, Peoples R China

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Source :

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES

ISSN: 1006-9321

Year: 2003

Issue: 2

Volume: 46

Page: 204-208

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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