The　resistance　of　chalcogenide　glass　GexAsySe1-x-y　film　is　difficult　to　be　observed　due　to　the　electrons　pinned　near　the　Fermi　level,　the　large　electron　binding　energy,　and　the　large　film　resistance.　Because　the　resistance　is　too　large,　the　test　method　of　Hall　effect　cannot　be　used　to　investigate　the　electrical　properties　for　chalcogenide　glass.　In　this　work,　the　resistance　relaxation　states　of　a　series　of　Ge(x)As(y)Se(1-x-y　)films　with　different　components　are　observed　by　reducing　the　resistance　under　non-equilibrium　temperature　conditions　from　300　to　440　K,　and　then　the　local　state　electron　transport　mechanism　is　investigated.　It　is　interesting　that　the　electrical　properties　parameters　show　three　relaxation　states:　1)　The　conventional　trend　is　that　the　conductivity　decreases　with　the　increase　of　temperature.　2)　One　particular　trend　is　that　the　resistance　presents　a　wavy　shape　as　the　temperature　increases.　3)　The　most　special　trend　is　that　as　the　temperature　is　raised　during　the　conductivity　measurements,　the　conductivity　increases　before　decreases　after　having　reach　a　certain　temperature.　Computer　calculation　results　show　that　the　Boltzmann　fit　formula　is　more　suitable　than　simply　Boltzmann　formula　for　GexAsySe1-x-y　halcogenide　film　in　terms　of　a　low-mobility　semiconductor　with　deep　Fermi　level　and　hopping　conduction.　Through　calculations,　it　is　found　that　three　relaxation　states　are　decided　by　the　density　of　the　localized　states　at　Fermi　level.