The Equivalent Circuit Model of Si/SiGe Microwave HBT
英文摘要
In this paper,the direct current SPICE parameters of multi-emitter SiGe microwave HBT based on GP model have been extracted by experimental measurement.The direct current output performances have been simulated and the difference between the small injection case and large injection ease was analyzed on the software platform of PSPICE.On the other hand,the alternate current equivalent circuit model has been constructed by intrinsic H parameters and the structure size.The values of S21 and fT by simulation are in good agreement with that of test.Basing on this,the difference of the equivalent circuit model between HBT and BJT was compared.
