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作者:

Zhang, Zhao (Zhang, Zhao.) | Zhang, Wanrong (Zhang, Wanrong.) (学者:张万荣) | Xie, Hongyun (Xie, Hongyun.) | Jin, Dongyue (Jin, Dongyue.) | Na, Weicong (Na, Weicong.) | Wan, Hezhan (Wan, Hezhan.) | Zhang, Sijia (Zhang, Sijia.) | Wang, Feihu (Wang, Feihu.) | Huang, Jiancheng (Huang, Jiancheng.)

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CPCI-S

摘要:

Based on gyrator-C principle, a novel active inductor with high self-resonance frequency, high Q factor and independent adjustment of inductance is proposed in this paper. A varactor is added in parallel with the positive transconductor to improve the tunable range of inductance. A tunable resistor between positive transconductor and negative transconductor is used to generate negative resistance, thus enhance the Q factor. Furthermore, a feedback capacitor is also employed not only to generate negative conductance for enhancing the Q factor, but also to provide negative capacitance for achieving high self-resonance frequency. The results show that the self-resonance frequency is up to 12GHz, the peak Q factor is more than 1300. The peak inductance can be adjusted significantly between 25.1nH-84.8nH with the tuning range of 108.6%, whereas the variation of the peak Q factor is only 1.6%.

关键词:

active inductor high-frequency independent adjustment

作者机构:

  • [ 1 ] [Zhang, Zhao]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Wanrong]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xie, Hongyun]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Jin, Dongyue]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Na, Weicong]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Wan, Hezhan]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Sijia]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Wang, Feihu]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Huang, Jiancheng]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • 张万荣

    [Zhang, Wanrong]Beijing Univ Technol, Coll Microelect, Fac Informat Technol, Beijing 100124, Peoples R China

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来源 :

2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE)

ISSN: 2378-8593

年份: 2019

语种: 英文

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