Three-dimensional　integration　technology　using　TSV　interconnections　has　emerged　as　a　promising　solution　to　improve　the　performance　of　microelectronic　devices.　It　is　necessary　to　study　the　effect　of　strain　rate　and　work　temperature　on　the　interfacial　strength　of　Cu/Ta　interface　for　microelectronic　devices　reliability.　In　this　work,　to　investigate　the　effect　of　the　temperature　and　strain　rate　on　the　Cu/Ta　interfacial　properties,　a　series　of　large-scale　molecular　dynamic　(MD)　simulations　were　performed.　The　stress-strain　curves　and　the　deformation　processes　of　Cu/Ta　interface　were　obtained.　The　results　showed　that　the　interfacial　tensile　strength　and　interfacial　shear　strength　of　Cu(010)/Ta(010)　interface　are　5.56　GPa　and　0.465　GPa,　respectively,　when　the　strain　rate　is　10(9)/s　and　temperature　is　300　K.　And　the　location　of　failure　for　Cu/Ta　interface　is　closer　to　the　monocrystalline　Cu　parts.　Then,　the　effects　of　strain　rate　and　temperature　on　the　interfacial　tensile　and　shear　strength　were　discussed,　and　the　results　indicated　that　the　interfacial　strength　decrease　with　the　decrease　of　strain　rate　from　10(9)/s　to　10(7)/s.　Similarly,　the　strongest　correlation　was　seen　to　be　between　the　interfacial　strength　and　temperature,　it　can　be　seen　that　the　interfacial　tensile　and　shear　strength　decrease　with　increasing　of　the　temperature.