Grinding　of　bonded　wafers　is　an　essential　process　for　fabricating　3D　stacked　wafer.　However,　due　to　the　complex　structures　and　various　materials　of　bonded　wafers,　the　risk　of　cracks　in　the　grinding　process　of　the　wafer　is　greatly　increased.　In　this　paper,　a　dynamic　finite　element　method　for　grinding　of　bonded　wafer　is　developed　to　study　the　grinding-induced　stress.　It　was　found　that　the　heterogeneous　structure　of　the　bonded　wafer　has　a　large　effect　on　the　stress　distribution,　which　is　about　17　times　higher　than　the　contact　pressure　between　the　grinding　wheel　and　the　workpiece.　The　effects　of　Cu　bump　diameter/　pitch/　height　on　stress　distribution　were　also　analyzed　and　discussed.