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作者:

Zhao, Shuai (Zhao, Shuai.) | Qin, Fei (Qin, Fei.) (学者:秦飞) | Yang, Mengke (Yang, Mengke.) | Xiang, Min (Xiang, Min.) | Yu, Daquan (Yu, Daquan.)

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CPCI-S EI

摘要:

Wafer warpage has been an important problem to affect the manufacturability and reliability in Wafer Level Chip Scale package (WLCSP). In this paper, wafer warpage evolution is studied for a six-side molded WLCSP using finite element model. A method to mimic the actual fabricating process is presented based on the "Element birth & death" and "Restart" technology. Key process such as topside molding, backside grinding and backside molding is taken into account and the results match with the experiment well. The effect of the parameters and structural parameters on wafer warpage characteristics is analyzed.

关键词:

Numerical simulation Six-side molding Warpage evolution Half GPD model WLCSP

作者机构:

  • [ 1 ] [Zhao, Shuai]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Qin, Fei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Yang, Mengke]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xiang, Min]Huatian Technol Kunshan Elect Co Ltd, Kunshan 215300, Peoples R China
  • [ 5 ] [Yu, Daquan]Huatian Technol Kunshan Elect Co Ltd, Kunshan 215300, Peoples R China

通讯作者信息:

  • 秦飞

    [Qin, Fei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China

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来源 :

ICEPT2019: THE 2019 20TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY

年份: 2019

语种: 英文

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

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