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摘要:
We presented a GaN Schottky diode model with consideration of self-heating effect of devices in operation. The impact of diode chip temperature on the current and capacitance was taken into account in this model. The thermal resistance of diode chip was extracted by simulation combined measurement to calculate the temperature of Schottky junction with different pumping power. Advantages of established device model in the design of a 220GHz frequency doubler were presented in the end.
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来源 :
2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)
ISSN: 2162-7541
年份: 2019
语种: 英文
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