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摘要:
In this paper, the impact of interconnect resistance on 1S1R crossbar array performance is analyzed. Based on elements test results, a crossbar array model is set up considered interconnect resistance. Simulation shows that read margin decreases dramatically when interconnect resistance is too large to keep selector at ON-state, especially under floating scheme. When interconnect resistance is larger than 6 Omega, write margin will drop below 50%, under 1/3 bias scheme. The results show that, the degradation of read margin and write margin caused by interconnect resistance can be suppressed by improving the on/off ratio and low-resistance of selector.
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来源 :
2019 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC)
年份: 2019
语种: 英文
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