In　this　paper,　enhancement　of　Aluminum　doping　profile　in　semi-insulating　4H-SiC　by　using　Eximer　laser　in　AlCl3　aqueous　solution　is　focused.　Several　active　parameters　like　number　of　shots,　laser　power　and　dopants　solution　density　affect　the　doping　mechanism.　Laser　doping　with　increase　of　AlCl3　solution　concentration　from　28　to　36　wt.%　results　in　more　efficient　doping　with　merging　features　like　better　ohmic　contact　formation　having　ideal　symmetry　factor.　Hall　Effect　measurement　using　Van　der　Pauw　method　show　that　laser　produces　a　highly　doped　p-type　layer　with　increasing　carrier　concentration　from　10(12)　/cm(2)　to　a　maximum　10(15)/cm(2)　by　tuning　parameter.　Current-Voltage　characteristics　of　modified　region　show　the　ohmic　behavior　with　reduction　in　resistance.　UV　spectrometer　absorption　tangent　line　shifts　from　375　nm　to　401　nm　indicating　that　Al　impurity　has　been　introduced　in　4H-SiC.