Low　reverse-bias　series　resistance　tunnel　junctions　(TJs)　are　the　key　to　improving　the　performances　of　high　efficiency　multi-junction　semiconductor　laser　diodes　(MJLDs).　In　this　paper,　InGaAs　QW　TJ　and　InGaAs　DQW　TJ　with　single　InGaAs　layer　and　double　InGaAs　layers　inserted　into　GaAs　TJs　separately,　are　proposed.　TJ　chips　were　fabricated　by　metal　organic　chemical　vapor　deposition　(MOCVD)　technology　and　semiconductor　process.　The　measurement　results　of　the　devices　display　that　the　operating　voltage　of　the　InGaAs　QW　TJ　and　the　InGaAs　DQW　TJ　is　lower　than　that　of　the　GaAs　TJ　under　the　same　injection　current,　whether　it　is　a　small　current　or　a　large　current,　and　the　InGaAs　DQW　TJ　operating　voltage　is　lower　than　that　of　the　InGaAs　QW　TJ.　Both　GaAs　TJ　and　InGaAs　DQW　TJ　were　applied　to　1060　nm　dual　active　region　semiconductor　laser　diode.　The　ridge　lasers　with　a　strip　width　of　100　mu　m　and　a　cavity　length　of　2　mm　were　fabricated.　The　working　voltage　is　reduced　from　3.81　V　to　3.38　V　at　1　A　drive　current.　Further　experimental　results　indicate　that　the　reverse-bias　series　resistance　of　InGaAs　QW　TJ　and　InGaAs　DQW　TJ　is　lower　than　that　of　GaAs　TJ,　and　the　performances　of　InGaAs　DQW　TJ　are　the　best.　This　is　of　great　significance　to　reduce　the　heat　loss　of　MJLDs　and　improve　its　performances.