Direct Growth of Large-area Graphene by Cross-linked Parylene Graphitization toward Photodetection - 文章详情页

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Large　area　uniform　graphene　was　directly　grown　on　insulating　substrate　by　cross-linked　Parylene　graphitization.　The　as-grown　graphene　was　used　for　the　fabrication　of　graphene-Si　Schottky　junction　photodetector　with　a　responsivity　of　275.9　mA/W.　(C)　2019　The　Author(s)

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[ 1 ] [Dong, Yibo]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 2 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 3 ] [Xie, Yiyang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 4 ] [Pan, Guanzhong]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 5 ] [Wang, Qiuhua]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 6 ] [Sun, Jie]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
[ 7 ] [Cheng, Chuantong]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[ 8 ] [Mao, Xurui]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[ 9 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350116, Fujian, Peoples R China

通讯作者信息：

[Dong, Yibo]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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