The　optical　and　electrical　properties　of　indium　metal　oxide　(IMO)　films　have　been　investigated　under　different　deposition　conditions　for　silicon　heterojunction　(SHJ)　solar　cell　applications.　By　adjusting　oxygen　concentration　in　the　sputtering　gas,　mid　increasing　magnetic　field　strength　of　the　cathode,　we　observed　enhancements　in　photoelectric　properties　of　the　IMO　film.　A　maximum　Hall　mobility　of　49.1　cm(2)/V.s　was　reached　with　optimal　transmittance.　Furthermore,　there　was　a　0.62　mA.cm(-2)　gain　in　short-circuit　current　(Jsc)　with　high　performance　IMO　films,　resulting　in　an　increased　conversion　efficiency　by　0.6%.