In　this　paper,　the　impact　of　punch-through　stop　(PTS)　doping　and　fin　angle　on　the　total　ionizing　dose　(TID)　response　of　14rim　bulk　FinFETs　are　investigated　by　3D　TCAD　simulation.　The　off-state　leakage　current　(Ion)　degradation　induced　by　TID　irradiation　is　effectively　reduced　with　the　increase　of　PTS　doping　concentration　and　depth.　The　optimized　PTS　doping　condition　is　illustrated　to　improve　the　TID　hardness　of　bulk　FinFETs.　Besides,　the　impact　of　fin　angle　on　TIE)　response　is　also　investigated,　which　shows　limited　impact　on　the　performance　degradation.　The　results　may　provide　guideline　for　radiation　hardening　process　design　of　bulk　FinFETs.