dBiFeO(3)　thin　films　were　deposited　on　Nb-doped　SrTiO3　substrates　by　radio-frequency　magnetron　sputtering.　They　were　annealed　in　760　and　1.5　Ton　of　oxygen,　respectively,　and　two　resistive　switching　polarities　were　observed　for　the　films.　Their　current　density　voltage　characteristics　comply　with　space　charge　-limited　(SCL)　conduction.　For　the　BiFeO3　thin　film　annealed　at　high　oxygen　pressure,　the　trapping/detrapping　of　charge　carriers　is　responsible　for　its　resistive　switching　effect.　For　the　film　annealed　at　low　pressure,　the　density　of　oxygen　vacancies　is　high,　and　the　modulation　of　the　interface　Schottky　barrier　by　the　migration　and　accumulation　of　oxygen　vacancies　should　play　the　dominant　role　in　the　resistive　switching　effect.