In　this　paper,　according　to　the　analysis　of　insulated　gated　bipolar　transistor　(IGBT)　failure　module,　the　potential　reliability　defects　of　IGBT　module　are　evaluated　by　the　finite　element　method　(FEM).　The　simulation　model　is　based　on　a　commercial　device.　Results　show　that,　thermoelectric　stress　may　cause　the　deformation　of　IGBT　module,　and　then　form　the　solder　delamination　or　voids;　solder　defects　can　greatly　increase　the　junction　temperature,　which　makes　the　larger　deformation;　the　higher　duty　cycle　will　make　IGBT　module　deformation　increase,　which　is　easier　to　form　voids　or　cracks.　All　these　will　form　a　vicious　circle,　and　then　bring　higher　failure　risk.