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作者:

Hu, Dongdong (Hu, Dongdong.) | Xie, Xuesong (Xie, Xuesong.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Qi, Shuaibing (Qi, Shuaibing.)

收录:

CPCI-S

摘要:

This paper is mainly for the study of current mode Class-D(CMCD) power amplifier at 1MHz operating frequency. The article mainly focuses on the influence of the driving circuit of the power MOSFET on the Class-D amplifier at high frequency, the parameter calculation in the power amplifier circuit and the parameters of the output transformer. The calculations are discussed in three aspects. In addition, the article discusses the Class-D materials used in the circuit. The article realizes the development of a current-type Class-D amplifier based on the efficiency value of nearly 80% at the operating frequency of 1MHz, and it builds a specific circuit for physical design and verification.

关键词:

1MHz Class-D Parameter design Power amplifier

作者机构:

  • [ 1 ] [Hu, Dongdong]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
  • [ 2 ] [Xie, Xuesong]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
  • [ 3 ] [Zhang, Xiaoling]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
  • [ 4 ] [Qi, Shuaibing]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

通讯作者信息:

  • [Hu, Dongdong]Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

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来源 :

2018 3RD IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM)

年份: 2018

页码: 29-32

语种: 英文

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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