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Author:

Ma, He (Ma, He.) (Scholars:马赫) | Wang, Yu (Wang, Yu.) | Lu, Rong (Lu, Rong.) (Scholars:戎路) | Tan, Fangrui (Tan, Fangrui.) | Fu, Yulan (Fu, Yulan.) | Wang, Guang (Wang, Guang.) | Wang, Dayong (Wang, Dayong.) (Scholars:王大勇) | Liu, Kai (Liu, Kai.) | Fan, Shoushan (Fan, Shoushan.) | Jiang, Kaili (Jiang, Kaili.) | Zhang, Xinping (Zhang, Xinping.) (Scholars:张新平)

Indexed by:

EI Scopus SCIE

Abstract:

Active terahertz (THz) modulators play an essential role in THz technology. Because of the excellent THz modulation properties bestowed by its intrinsic metal-insulator transition (MIT) at 68 degrees C, vanadium dioxide (VO2) is an appealing active THz modulator material. Current active THz modulator designs based on pure VO2 films or metasurfaces deposited on traditional semiconductor substrates are typically subject to high triggering thresholds and slow responses. Therefore, further development of VO2-active THz modulators for superior performance requires new materials and device designs. In this paper, we develop a flexible active THz modulator based on an aligned carbon nanotube thin film coated with VO2. THz wave modulation driven by the MIT of VO2 presents a giant modulation depth of up to 91% and broad bandwidth (>2.3 THz). Various stimuli can be utilized to trigger the THz modulator. The response time of the THz modulator is 27 ms, which can be further shortened by decreasing the device size. In addition, the light-triggering threshold is quite low (0.58 mW mm(-2)). Optical anisotropy enables polarization of the THz modulator. Since they combine superior modulation performance, responsive stimulus diversity, versatility, and flexibility, these active THz modulators find applications in THz communication, THz imaging, etc.

Keyword:

Author Community:

  • [ 1 ] [Ma, He]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Yu]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Lu, Rong]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Tan, Fangrui]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Fu, Yulan]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Dayong]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Xinping]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 8 ] [Wang, Guang]Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Dept Phys,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
  • [ 9 ] [Fan, Shoushan]Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Dept Phys,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
  • [ 10 ] [Jiang, Kaili]Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Tsinghua Foxconn Nanotechnol Res Ctr, Dept Phys,Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
  • [ 11 ] [Liu, Kai]Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

Reprint Author's Address:

  • 张新平

    [Zhang, Xinping]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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Source :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

Year: 2020

Issue: 30

Volume: 8

Page: 10213-10220

6 . 4 0 0

JCR@2022

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:169

Cited Count:

WoS CC Cited Count: 22

SCOPUS Cited Count: 23

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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