Active　terahertz　(THz)　modulators　play　an　essential　role　in　THz　technology.　Because　of　the　excellent　THz　modulation　properties　bestowed　by　its　intrinsic　metal-insulator　transition　(MIT)　at　68　degrees　C,　vanadium　dioxide　(VO2)　is　an　appealing　active　THz　modulator　material.　Current　active　THz　modulator　designs　based　on　pure　VO2　films　or　metasurfaces　deposited　on　traditional　semiconductor　substrates　are　typically　subject　to　high　triggering　thresholds　and　slow　responses.　Therefore,　further　development　of　VO2-active　THz　modulators　for　superior　performance　requires　new　materials　and　device　designs.　In　this　paper,　we　develop　a　flexible　active　THz　modulator　based　on　an　aligned　carbon　nanotube　thin　film　coated　with　VO2.　THz　wave　modulation　driven　by　the　MIT　of　VO2　presents　a　giant　modulation　depth　of　up　to　91%　and　broad　bandwidth　(＞2.3　THz).　Various　stimuli　can　be　utilized　to　trigger　the　THz　modulator.　The　response　time　of　the　THz　modulator　is　27　ms,　which　can　be　further　shortened　by　decreasing　the　device　size.　In　addition,　the　light-triggering　threshold　is　quite　low　(0.58　mW　mm(-2)).　Optical　anisotropy　enables　polarization　of　the　THz　modulator.　Since　they　combine　superior　modulation　performance,　responsive　stimulus　diversity,　versatility,　and　flexibility,　these　active　THz　modulators　find　applications　in　THz　communication,　THz　imaging,　etc.