In　the　electronics　packaging　process,　warpage　and　thermal　stress　are　two　important　causes　which　lead　to　packaging　failure.　In　this　paper,　ABAQUS　is　used　to　perform　three-dimensional　numerical　simulation　of　eSiFo　packaging　products　from　the　thermodynamic　point　of　view.　The　effects　of　different　structural　parameters　on　wafer　warpage　and　thermal　stress　in　electronic　packages　are　simulated.　In　the　simulation　part,　single　factor　analysis,　Taguchi　orthogonal　experiment　design　and　finite　element　analysis　are　combined　to　obtain　the　optimized　process　parameters　and　perform　simulation　analysis.　The　result　shows　that　the　structural　parameter　that　has　the　greatest　influence　on　the　von　Mises　stress　value　of　the　wafer　is　the　window　size.　And　the　structural　parameter　that　has　the　greatest　influence　on　the　wafer　warpage　is　the　Die　thickness.　The　thickness　of　the　adhesive　layer　and　the　thickness　of　the　passivation　layer　have　a　relatively　small　effect　on　the　von　Mises　stress　and　the　warpage　value　of　the　wafer.　Under　the　optimized　process　parameters,　the　maximum　von　Mises　stress　and　the　maximum　warpage　value　are　much　smaller　than　the　initial　process.