As　the　demand　of　power　module　in　higher　power　density　occasion　is　increasing,　bonding　wire　and　solder　failure　of　insulated　gate　bipolar　transistor　(IGBT)　becomes　more　severe.　Accordingly,　it　is　of　great　significance　to　quantify　the　contribution　of　these　two　different　failure　modes　on　the　overall　module　degradation.　In　this　paper,　the　finite　element　(FE)　modes　of　different　bonding　wire　quantity　and　solder　void　area　have　been　established.　The　resistance　variation　of　these　models　has　been　calculated　and　compared.　Furthermore,　basing　on　the　relationship　of　resistance　and　saturation　voltage　(V-ce),　the　degradation　degree　of　two　failure　modes　has　been　evaluation.　Meanwhile,　the　effect　of　failure　ratio　of　bonding　wire　and　solder　on　temperature　has　been　measured　and　analyzed.　Results　show　that　solder　void　has　a　greater　impact　on　module　failure　than　bonding　wire　lift　off　When　the　lift　off　ratio　of　bonding　wire　is　44%,　V-ce　only　increases　by　3.5%　and　the　module　has　not　failure.　Nevertheless,　when　the　void　area　ratio　of　solder　is　22%,　V-ce　increases　by　38.7%,　which　has　cause　the　module　failure.　This　results　not　only　provide　a　simple　method　to　evaluate　the　electrical　and　thermal　properties　of　IGBT　module.　It　also　establishes　a　foundation　for　distinguishing　the　impact　of　different　failure　modes　on　the　degradation　degree　of　the　overall　module.