Additional　scattering　of　electrons　in　the　complex　MOSFET　channel　caused　by　off-cut　angle　of　(0001)　4H-SiC　wafer,　makes　accurate　crystal　face　acquisition　much　desired.　Molten　KOH　was　used　to　etch　the　circular　grooves　on　the　SiC　wafer　surface　in　muffle　furnace,　and　hexagonal　grooves　with　SiC　crystal　symmetry　were　obtained.　Average　etching　rates　at　500.　along　＜　11-20　＞　and　＜　1-100　＞　direction　were　about　4.826　um/min　and　4.112　um/min,　respectively,　with　a　etching　anisotropy　ratio　of　1.18.　The　m　face　was　obtained　by　controlling　the　etching　time　and　Si　face　was　obtained　by　self-stopping　effect.　The　method　we　developed　in　this　paper　has　potential　applications　in　the　accurate　crystal　face　acquisition　of　(0001)　4H-SiC　epi-wafer,　and　the　preparation　of　structures　based　on　4H-SiC.