Residual　stress　is　the　most　concerned　issue　in　wafer　grinding　process,　because　it　affects　wafer　performance　and　can　induce　wafer　warpage.　In　this　paper,　the　residual　stress　in　wafers　machined　by　different　processing　parameters　is　measured　by　Raman　Spectroscopy.　The　effects　of　wheel　feed　rate,　wheel　rotating　speed　and　wafer　rotating　speed　on　residual　stress　are　investigated.　Radial　distance　as　a　dimensional　parameter,　whose　effect　on　residual　stress　is　also　studied.　The　results　show　that　the　grinding　parameters　have　influence　on　residual　stress.　Residual　stress　on　wafer　surface　presents　non　uniform　distribution.　The　residual　stress　close　to　wafer　center　is　less　than　that　on　periphery.　Investigations　on　residual　stress　of　wafers　machined　by　various　processing　parameters　are　important　to　parameters　optimization.　To　explain　the　formation　mechanism　of　residual　stress,　the　surface　and　subsurface　damages　are　observed　by　Scanning　Electron　Microscope　(SEM).