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Abstract：
For power semiconductor devices, such as IGBTs, MOSFETs and FRDs, a high area efficiency of the edge termination structure can enlarge the active area and thus improve the current capacity for a given chip area. In this paper, a double-sided edge termination (DSET) is proposed for the first time. Simulation results show that it can improve the breakdown voltage by about 42% without increasing the width or area of edge the termination and the thickness of the chip.
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2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Year： 2017
Language： English
Cited Count：
WoS CC Cited Count： 1
SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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