ZnO　has　attracted　much　attention　because　of　its　high-energy　gap　and　exciton　binding　energy　at　room　temperature.　Compared　to　ZnO　thin　films,　ZnGaO　thin　films　are　more　resistive　to　oxidation　and　have　smaller　deformation　of　lattice.　In　this　study,　the　high　purity　ZnSe　and　Ga2O3　powders　were　weighted　at　a　molar　ratio　of　18:1.　Se　was　oxidized　to　Se2O3　and　separated　from　the　mixture　powders　by　using　conventional　solid　state　reaction　method　in　air,　and　the　ZnGaO　ceramic　target　was　prepared.　We　fabricated　the　ZnGaO　films　on　silica　glass　by　pulsed　laser　deposition　(PLD)　method　under　different　oxygen　pressure　at　room　temperature.　The　as-grown　films　were　tested　by　X-ray　diffraction　and　atomic　force　microscope　(AFM)　to　diagnose　the　crystal　structure　and　surface　morphology.　Moreover,　we　obtained　the　optical　transmittance　of　ZnGaO　film　and　found　that　the　electrical　conductivity　capacity　varied　with　the　increase　of　oxygen　pressure.