This　paper　proposes　a　novel　method　to　derive　the　junction　temperature　of　a　Silicon　Carbide　Schottky　Barrier　Diode　(SiC　SBD)　when　it　is　in　operation.　There　is　a　correlation　between　the　switching　waveforms　and　the　temperature,　due　to　the　material　parameters　and　the　carrier　vary　with　the　temperature.　Estimating　the　Turn-on-delay　time　as　a　temperature　sensitive　electrical　parameter　(TSEP),　the　chip　temperature　in　operation　can　be　evaluated.　The　experiment　is　based　on　signal　loop　-　dealing　with　the　output　signal　of　the　chip　by　the　peripheral　circuits,　then　putting　it　as　the　switching　signal　to　the　chip.　Thus,　each　minimal　turn-on-delay　time　-　at　nanosecond　level　-　can　be　accumulated　to　be　a　time　span　at　microsecond　or　second　level　and　the　value　is　averaged　to　evaluate　the　turn-on-delay　time.