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作者:

Chen, Xiaowei (Chen, Xiaowei.) | Pourbakhsh, Seyed Alireza (Pourbakhsh, Seyed Alireza.) | Hou, Ligang (Hou, Ligang.) | Gong, Na (Gong, Na.) | Wang, Jinhui (Wang, Jinhui.)

收录:

CPCI-S

摘要:

In three-dimensional (3D) integrated circuit (IC), a large number of dummy through silicon vias (TSV) are required for thermal and thinning concerns. However, limited attention is paid to the fact that these dummy TSVs can be multi-functional and used for timing purposes. In this paper, we propose to use those "timing wasteful" dummy TSVs to replace bit line delay cells. Also, a TSV allocation algorithm is presented to optimize the TSV array layout. Finally, three memory designs are implemented to verify the feasibility and reliability of the proposed technology. It is found that all delay cells in these 3 memories can be replaced by TSV arrays.

关键词:

3D IC bit line delay cells dummy TSV

作者机构:

  • [ 1 ] [Chen, Xiaowei]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 2 ] [Pourbakhsh, Seyed Alireza]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 3 ] [Gong, Na]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 4 ] [Wang, Jinhui]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 5 ] [Hou, Ligang]Beijing Univ Technol, VLSI, Beijing 100124, Peoples R China
  • [ 6 ] [Hou, Ligang]Beijing Univ Technol, Syst Lab, Beijing 100124, Peoples R China

通讯作者信息:

  • [Wang, Jinhui]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA

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来源 :

2016 5TH INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE)

ISSN: 2378-8593

年份: 2016

语种: 英文

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