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Author:

Chen, Xiaowei (Chen, Xiaowei.) | Pourbakhsh, Alireza (Pourbakhsh, Alireza.) | Hou, Ligang (Hou, Ligang.) | Gong, Na (Gong, Na.) | Wang, Jinhui (Wang, Jinhui.)

Indexed by:

CPCI-S

Abstract:

In Three-dimensional (3D) Integrated Circuit (IC), dummy TSVs are often required for thermal and thinning concerns. In this paper, we propose to use those "timing wasteful" dummy TSVs for timing optimization in on-chip memory, that is to replace bit line delay cells with dummy TSVs. The delay time is measured with different TSV sizes, TSV arrays, and technology nodes. Three memories are employed to verify the feasibility and reliability of the proposed technology.

Keyword:

3D IC TSV delay cell bit line

Author Community:

  • [ 1 ] [Chen, Xiaowei]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 2 ] [Pourbakhsh, Alireza]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 3 ] [Gong, Na]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 4 ] [Wang, Jinhui]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA
  • [ 5 ] [Hou, Ligang]Beijing Univ Technol, VLSI, Beijing 100124, Peoples R China
  • [ 6 ] [Hou, Ligang]Beijing Univ Technol, Syst Lab, Beijing 100124, Peoples R China

Reprint Author's Address:

  • [Chen, Xiaowei]North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58102 USA

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Source :

2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRO INFORMATION TECHNOLOGY (EIT)

ISSN: 2154-0357

Year: 2016

Page: 580-585

Language: English

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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