Four　level　sets　of　current　density　and　additive　concentration　are　used　to　electroplate　copper　into　the　through　silicon　via　to　prepare　four　sets　of　test　samples.　Each　set　of　samples　are　annealed　at　425　degrees　C　for　30min.　The　Cu-Si　interface　of　the　TSV　structure　and　the　copper　microstructure　are　observed　before　and　after　annealing,　and　the　copper　protrusion　is　measured　after　annealing.　Effects　of　the　electroplating　parameter　on　protrusion　of　copper　filled　in　through　silicon　via　(TSV-Cu)　after　annealing　are　investigated　experimentally.　The　results　show　that,　higher　electroplating　current　density　and　higher　additive　concentration　can　help　to　fabricated　finer　grained　TSV-Cu.　The　TSV-Cu　with　finer　grain　protrudes　less　after　the　annealing　process.　With　the　protrusion　occurs,　the　Cu-Si　interface　fracture　is　observed　for　all　the　samples.