The　coexistence　of　large　conductivity　and　robust　ferroelectricity　is　promising　for　high-performance　ferroelectric　devices　based　on　polarization-controllable　highly　efficient　carrier　transport.　Distinct　from　traditional　perovskite　ferroelectrics,　Bi(2)WO(6)with　a　layered　structure　shows　a　great　potential　to　preserve　its　ferroelectricity　under　substantial　electron　doping.　Herein,　by　artificial　design　of　photosensitive　heterostructures　with　desired　band　alignment,　three　orders　of　magnitude　enhancement　of　the　short-circuit　photocurrent　is　achieved　in　Bi2WO6/SrTiO(3)at　room　temperature.　The　microscopic　mechanism　of　this　large　photocurrent　originates　from　separated　transport　of　electrons　and　holes　in　[WO4](-2)and　[Bi2O2](+2)layers　respectively　with　a　large　in-plane　conductivity,　which　is　understood　by　a　combination　of　ab　initio　calculations　and　spectroscopic　measurements.　The　layered　electronic　structure　and　appropriately　designed　band　alignment　in　this　layered　ferroelectric　heterostructure　provide　an　opportunity　to　achieve　high-performance　and　nonvolatile　switchable　electronic　devices.