In　this　work,　we　studied　the　effect　of　alternative　n-type　doped　layer　by　using　hydrogenated　microcrystalline　silicon　oxide　(mu　c-SiOx:H(n)).　The　experimental　results　indicate　that　the　solar　cell　with　mu　c-SiOx:H(n)　has　a　larger　short-circuit　current　density　(J(SC)),　while　a　lower　fill　factor　(FF),　compared　to　the　cell　with　n-type　hydrogenated　amorphous　silicon　(a-Si:H(n).　External　quantum　efficiency　(EQE)　shows　that　the　increase　of　J(sc)　is　related　to　wider　band　gap　and　lower　optical　absorption　of　mu　c-SiOx:H(n).　Numerical　simulation　of　device　performance　suggests　that　the　lower　FF　is　due　to　a　larger　band　offset　at　the　i/n　interface　caused　by　lower　electron　affinity　of　mu　c-SiOx:H(n)　materials.　The　details　of　the　experiment　and　device　characterization,　such　as　the　IV　performance　and　EQE　spectrum　of　cells　using　different　n　layers,　transmittance　and　reflectance　of　different　i/n　stack　layers,　Raman　spectra　comparison,　and　band　diagram　characterization,　will　be　presented　in　this　paper.