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作者:

Li, Chong (Li, Chong.) | Xue, ChunLai (Xue, ChunLai.) | Liu, Zhi (Liu, Zhi.) | Cong, Hui (Cong, Hui.) | Guo, Xia (Guo, Xia.) (学者:郭霞) | Cheng, Buwen (Cheng, Buwen.)

收录:

CPCI-S Scopus

摘要:

A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40 mu m-diameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40 mu m-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.

关键词:

photodetector germanium Optical telecommunication saturation

作者机构:

  • [ 1 ] [Li, Chong]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 2 ] [Guo, Xia]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China
  • [ 3 ] [Li, Chong]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 4 ] [Xue, ChunLai]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 5 ] [Liu, Zhi]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 6 ] [Cong, Hui]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 7 ] [Cheng, Buwen]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

通讯作者信息:

  • [Li, Chong]Beijing Univ Technol, Inst Elect Informat & Control Engn, Photon Device Res Lab, Beijing 100124, Peoples R China

电子邮件地址:

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来源 :

INFRARED SENSORS, DEVICES, AND APPLICATIONS V

ISSN: 0277-786X

年份: 2015

卷: 9609

语种: 英文

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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