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作者:

Qin, Fei (Qin, Fei.) (学者:秦飞) | Hu, Yuankun (Hu, Yuankun.) | Dai, Yanwei (Dai, Yanwei.) (学者:代岩伟) | An, Tong (An, Tong.) | Chen, Pei (Chen, Pei.) | Gong, Yanpeng (Gong, Yanpeng.) | Yu, Huiping (Yu, Huiping.)

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EI Scopus SCIE

摘要:

Characterizations of equivalent thermal conductivity (ETC) of sintered silver is an important topic due to the thermal-mechanical reliability requirements of electronic packaging. In this paper, the effect of various types of cracks on the ETC of sintered silver are discussed. A numerical method to simulate the heat transfer behaviors of porous sintered silver containing the crack effect is presented. The results show that the ETC of sintered silver depends significantly on the crack length, crack orientation, porosity, and pore shape. Theoretical formulae to estimate the ETC of sintered silver are also presented, in which the effects of arbitrary crack depth, arbitrary crack orientation, arbitrary porosity, and arbitrary pore shape factor on ETC are included. It has been found that the influence of the side edge crack on the reduction of the ETC of sintered silver is the most obvious compared with the center crack and the upper edge crack. This study presents a quantitative method to evaluate the crack effect on the ETC of porous sintered silver.

关键词:

crack effect Equivalent thermal conductivity numerical computation sintered silver porosity

作者机构:

  • [ 1 ] [Qin, Fei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Hu, Yuankun]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Dai, Yanwei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [An, Tong]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Chen, Pei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Gong, Yanpeng]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Yu, Huiping]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Qin, Fei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Dai, Yanwei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 10 ] [An, Tong]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 11 ] [Chen, Pei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China
  • [ 12 ] [Gong, Yanpeng]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • 代岩伟

    [Dai, Yanwei]Beijing Univ Technol, Inst Elect Packaging Technol & Reliabil, Coll Mech Engn & Appl Elect Technol, Beijing 100124, Peoples R China;;[Dai, Yanwei]Beijing Univ Technol, Beijing Key Lab Adv Mfg Technol, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2020

期: 10

卷: 49

页码: 5994-6008

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:169

被引次数:

WoS核心集被引频次: 12

SCOPUS被引频次: 14

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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