Short　wavelength　and　middle　wavelength　dual　color　infrared　detector　were　designed　and　prepared　with　InAs/Ga(In)Sb　type-II　superlattices　materials.　The　Crosslight　software　was　used　to　calculate　the　relation　between　wavelength　and　material　parameter　such　as　thickness　of　InAs.　GaSb,　then　energy　strucutre　of　100　periods　8ML/8ML　InAs/GaSb　and　the　absorption　wavelength　was　calculated.　After　fixing　InAs/GaSb　thickness　parameter,　devices　with　nBn　and　pin　structure　were　designed　and　prepared　to　compare　performance　of　these　two　structures.　Comparison　results　showed　both　structure　devices　were　available　for　high　temperature　operation　which　black　detectivity　under　200K　were　7.9x10(8)cmHz(1/2)/W　for　nBn　and　1.9x10(9)cmHz(1/2)/W　for　pin　respectively.　Considering　the　simultaneous　readout　requirement　for　further　FPAs　application　the　NIP/PIN　InAs/GaSb　dual-color　structure　was　grown　by　MBE　method.　Both　two　mesas　and　one　mesa　devices　structure　were　designed　and　prepared　to　appreciate　the　short/middle　dual　color　devices.　Cl-2-based　ICP　etching　combined　with　phosphoric　acid　based　chemicals　were　utilized　to　form　mesas,　silicon　dioxide　was　deposited　via　PECVD　as　passivation　layer.　Ti/Au　was　used　as　metallization.　Once　the　devices　were　finished,　the　electro-optical　performance　was　measured.　Measurement　results　showed　that　optical　spectrum　response　with　peak　wavelength　of　2.7　mu　m　and　4.3　mu　m　under　77K　temperature　was　gained,　the　test　results　agree　well　with　calculated　results.　Peak　detectivity　was　measured　as　2.08x　10(11)cmHz(1/2)/W　and　6.2x10(10)cmHz(1/2)/W　for　short　and　middle　wavelength　infrared　detector　respectively.　Study　results　disclosed　that　InAs/Ga(In)　Sb　type-II　SLs　is　available　for　both　short　and　middle　wavelength　infrared　detecting　with　good　performance　by　simply　altering　the　thickness　of　InAs　layer　and　GaSb　layer.