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Author:

Han, Jun (Han, Jun.) | Cui, Boyao (Cui, Boyao.) | Xing, Yanhui (Xing, Yanhui.) | Li, Tao (Li, Tao.) | Zhao, Jiahao (Zhao, Jiahao.) | Cao, Xu (Cao, Xu.) | Zhang, Yao (Zhang, Yao.) | Zhang, Baoshun (Zhang, Baoshun.)

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EI Scopus SCIE

Abstract:

Aluminum nitride (AlN) films were deposited on Si (100) substrate at room temperature in different N-2 flow ratios (N-2/(N-2 + Ar)) by direct current (DC) magnetron sputtering. AlN films were prepared with the N2 flow ratios from 20 to 50%. The intensity of X-ray diffraction peak on (002) plane enhanced with the increase of N-2 flow ratio. When the flow ratio of N-2 was 50%, the AlN film tended to be the most preferred orientation of (002) plane with the value of full width half maximum being 0.34 degrees. Optical property was studied by ellipsometer and the refractive index of the samples was between 1.92 and 2.05. According to the Fourier transform infrared spectroscopy, the density of Al-N bonds went up gradually and the tensile stress had a rising trend with the increasing N-2 flow ratio. In short, this work is helpful for the growth of AlN buffer layer deposited on Si (100) substrate.

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Author Community:

  • [ 1 ] [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Cui, Boyao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Xing, Yanhui]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Li, Tao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Zhao, Jiahao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Cao, Xu]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 7 ] [Zhang, Yao]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Baoshun]Chinese Acad Sci, SuZhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

Reprint Author's Address:

  • [Han, Jun]Beijing Univ Technol, Dept Informat, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

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Source :

MICRO & NANO LETTERS

Year: 2020

Issue: 8

Volume: 15

Page: 556-560

1 . 3 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:100

Cited Count:

WoS CC Cited Count: 6

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 4

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