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作者:

Ji, Lingfei (Ji, Lingfei.) (学者:季凌飞) | Lv, Xiaozhan (Lv, Xiaozhan.) | Wu, Yan (Wu, Yan.) | Lin, Zhenyuan (Lin, Zhenyuan.) | Jiang, Yijian (Jiang, Yijian.) (学者:蒋毅坚)

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CPCI-S EI Scopus

摘要:

We propose the fabrication of two types high performance texturized antireflective structures on crystalline (100) silicon (c-Si) surface by hybrid picosecond laser scanning irradiation followed by chemical corrosion. The design and the fabrication with high controllable performance were studied. The hybrid method includes 1064 nm picosecond (ps) laser scanning to form micro-hole array and subsequently short-time alkaline corrosion. After ps laser processing, there is little reconsolidation and heat affect zone on the silicon surface, which is beneficial to achieve the precise chemical corrosion effect. Depending on the laser scanning intervals, scanning times and chemical corrosion time, a variety of surface texture morphologies, even a special micro-nano hierarchical structure in which finer nano-structures formed in the micro units of the texture, were achieved. Observing with SEM, the average diameter of the micro-holes in the micro-nano hierarchica is 25 similar to 30 mu m, while the average size of the nano-level ladder-like structures on the micro-hole wall is from dozens to hundreds of nanometers. Comparing to the traditional laser texturing techniques for c-Si solar cell, the whole laser processing was carried out in an open air ambient without using etch mask and SF6/O-2 plasma. The results show the reflectance value of the fabricated c-Si surfaces can reach as low as 6% (400 nm similar to 1000 nm). This is a potential method for economical antireflective structures fabrication which is ideal for using in the high-efficiency silicon-based photoelectronic devices.

关键词:

chemical corrosion light trapping picosecond laser Si-based photoelectronics surface structure

作者机构:

  • [ 1 ] [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Lv, Xiaozhan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wu, Yan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Lin, Zhenyuan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Jiang, Yijian]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • 季凌飞

    [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

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来源 :

LASER-BASED MICRO- AND NANOPROCESSING IX

ISSN: 0277-786X

年份: 2015

卷: 9351

语种: 英文

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

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