Controllable　deposition　of　Ga　droplets　on　a　GaN　template　is　discussed　in　detail　in　the　present　work.　It　is　found　that　the　Ga　droplet　density　shows　apparent　nonlinear　dependence　on　the　flux　of　triethylgallium　under　certain　annealing　conditions.　A　simplified　model　based　on　the　weakening　of　cluster　mobility　is　proposed　to　explain　the　phenomenon.　In　addition,　based　on　the　different　mobility　of　Ga　on　different　substrates,　a　SiO2　mask　with　ordered　nanopore　array　is　designed　and　optimized　for　controllable　catalyst　deposition.　By　further　optimizing　the　deposition　and　annealing　process,　a　higher　filling　rate　of　nanopores　is　obtained,　and　ordered　beta-Ga2O3　nanowire　arrays　perpendicular　to　substrates　are　then　achieved.　The　controllable　uniform　vertical　nanowire　array　would　further　promote　optimization　of　nanowire　growth　and　device　fabrication.