It　was　very　different　between　the　etching　rate　of　large　patterns　and　narrow　grooves　on　InGaAs/InP　materials　by　inductively　coupled　plasma　(ICP)　technology.　With　the　aim　of　high　etching　rate,　good　morphology,　smooth　interfaces　and　fewer　defects,　the　etching　mechanisms　of　ICP　via　changing　gas　flow　rate,　chamber　pressure　and　RF　power　have　been　analyzed.　Some　recipes　have　been　found　to　achieve　a　narrow　stripe　and　deep　groove　with　good　uniformity,　interface　and　morphology　via　high　etching　rate　and　good　selectivity.　The　different　phenomena　during　etching　the　large　patterns　and　narrow　grooves　have　been　explained　and　the　sets　of　parameters　have　been　summarized　that　is　adapted　to　the　array　device　on　InGaAs/InP　materials　during　the　ICP　process.