MOCVD Optimized Growth for Laser Diodes Emitting at 980nm via Photoluminescence - 文章详情页

作者：

Li, Jianjun (Li, Jianjun.) | He, Linjie (He, Linjie.) | Lin, Shengjie (Lin, Shengjie.) | Han, Jun (Han, Jun.) | Deng, Jun (Deng, Jun.)

收录：

CPCI-S EI Scopus

摘要：

We　have　investigated　different　growth　conditions　of　AlGaAs　and　InGaAs　quantum　wells　(QWs)　by　metal　organic　chemical　vapor　deposition　(MOCVD)　for　applications　in　high-power　laser　diodes　emitting　at　980nm.　According　to　different　experimental　results　measured　by　Photoluminescence　(PL),　we　optimized　the　growth　conditions.　Growth　temperature,　V/III　ratio,　growth　interruption　and　spacer　time　have　been　studied　in　detail.　We　have　found　the　optimal　growth　conditions　for　laser　diodes　emitting　at　980nm　grown　by　metal　organic　chemical　vapor　deposition　(MOCVD).　As　for　our　experiments,　the　best　suitable　growth　temperature　of　AlGaAs　and　InGaAs　QWs　was　700　degrees　C　and　600　degrees　C,　respectively.　The　growth　procedure　of　laser　diodes　should　include　growth　interruption　and　spacer　layers　surrounding　QWs.　V/III　ratio　was　about　130　during　the　growth　of　QWs.

关键词：

InGaAs V/III ratio Photoluminescence temperature spacer semiconductor laser AlGaAs

作者机构：

[ 1 ] [Li, Jianjun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China
[ 2 ] [He, Linjie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China
[ 3 ] [Lin, Shengjie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China
[ 4 ] [Han, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China
[ 5 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China

通讯作者信息：

[He, Linjie]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing, Peoples R China

电子邮件地址：

lijianjun@bjut.edu.cn |
helj@emails.bjut.edu.cn

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