The　subsurface　damage　(SSD)　distributions　in　different　crystal　orientations　and　radial　locations　of　silicon　wafers　(100)　are　analyzed　through　cross-section　microscopy　method.　The　experimental　results　show　that　the　subsurface　damage　depth　is　non-uniform　in　the　ground　wafer.　Along　the　radial　direction,　the　subsurface　damage　depth　increases　from　the　center　to　the　edge　of　the　wafer,　and　the　depth　in　＜　110　＞　crystal　orientation　is　larger　than　that　in　＜　100　＞　crystal　orientation.