Direct　fabrication　of　similar　to　10　nm　features　by　optical　means　in　far　field　and　in　ambient　air　on　semiconductor　surfaces　is　significant　for　next-generation　advances　nanomanufacturing.　We　report　here　a　new　method　that　enables　the　direct　formation　of　12　nm　(lambda/66)　features　on　silicon　surfaces.　It　is　processed　in　far　field　and　in　ambient　air　via　the　irradiation　of　orthogonally　polarized　double　femtosecond　laser　beams.　The　coupling　of　orthogonally　polarized　double　femtosecond　laser　beams　and　the　incubation　effect　due　to　multiple　femtosecond　laser　pulses　irradiation　under　high　repetition　rate　enable　the　12　nm　nanostructures　creation　parallel　to　the　scanning　direction,　regardless　of　scanning　path.