Gamma-ray　(gamma-ray)　radiation　for　silicon　single　photon　avalanche　diodes　(Si　SPADs)　is　evaluated,　with　total　dose　of　100　krad(Si)　and　dose　rate　of　50　rad(Si)/s　by　using(60)Co　as　the　gamma-ray　radiation　source.　The　breakdown　voltage,　photocurrent,　and　gain　have　no　obvious　change　after　the　radiation.　However,　both　the　leakage　current　and　dark　count　rate　increase　by　about　one　order　of　magnitude　above　the　values　before　the　radiation.　Temperature-dependent　current-voltage　measurement　results　indicate　that　the　traps　caused　by　radiation　function　as　generation　and　recombination　centers.　Both　leakage　current　and　dark　count　rate　can　be　almost　recovered　after　annealing　at　200　degrees　C　for　about　2　hours,　which　verifies　the　radiation　damage　mechanics.