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摘要:
Based on the band gap theory, a dual-wavelength VCSELs with same direction, equal-intensity, high-Q program is presented. The wavelengths of the VCSEL can be located with the aid of the Al0.8Ga0.2As defect layer in 1D photonic crystal structure. The results indicated that one-dimensional PC with a sheet of defect layer provides a parent structure on which laser beam can be well engineered without the expense of the macroscopic structural integrity.
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来源 :
SEMICONDUCTOR LASERS AND APPLICATIONS V
ISSN: 0277-786X
年份: 2012
卷: 8552
语种: 英文