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[会议论文]

Impact of High Frequency Correlated Noise on SiGe HBT Low Noise Amplifier Design

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作者:

Shen, Pei (Shen, Pei.) | Niu, Guofu (Niu, Guofu.) | Xu, Ziyan (Xu, Ziyan.) | 展开

收录:

CPCI-S

摘要:

This paper investigates the impact of high frequency noise correlation on SiGe HBT LNA design. With correlation, simultaneous noise and impedance match is found to continue to hold approximately. However, a larger size and hence a higher biasing current are required for noise matching. The actual noise figure (NF) of LNAs designed without considering noise correlation is also investigated. Further investigation shows that a size considerably smaller than noise matching size is more preferable, as it produces high gain, high linearity and NF only slightly higher noise figure at much smaller power consumption.

关键词:

high frequency noise correlation Cascode LNA noise figure emitter length

作者机构:

  • [ 1 ] [Shen, Pei]Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA
  • [ 2 ] [Niu, Guofu]Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA
  • [ 3 ] [Xu, Ziyan]Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA
  • [ 4 ] [Zhang, Wanrong]Beijing Univ Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Shen, Pei]Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA

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来源 :

2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF)

年份: 2012

页码: 125-128

语种: 英文

被引次数:

WoS核心集被引频次: 2

近30日浏览量: 1

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