The　method　of　evaluation　of　VDMOS　storage　failure　rate　is　presented　and　explained　in　this　paper.　To　obtain　a　large　number　of　devices　working　hours　in　a　short　time,　the　accelerated　factor　k　is　brought　into　the　failure　rate　test,　from　which　the　test　time　can　be　reduced　to　1/k.　In　this　paper,　the　failure　rate　test　of　VDMOS　is　carried　out　at　270　degrees　C　about　1500　hours　with　the　accelerator　factor　k=21.73079.　The　storage　lifetime　of　VDMOS　was　calculated　over　10　years.　The　key　parameters　have　been　measured　and　reliability　of　VDMOS　in　ten　years　storage　time　has　been　evaluated.