Three　different　aperture　diameters　(6　mu　m,　8　mu　m,　10　mu　m)　of　proton　implantation　vertical　cavity　surface　emitting　lasers　(VCSEL)　are　fabricated　by　two　different　group　energy　bombardment,　where　the　epitaxial　structure　is　designed　lasing　at　850nm.　The　injection　energy　is　300kev,　230kev　and　330kev,　250kev,　160kev　respectively,　in　order　to　confine　the　current　path.　To　avoid　channel　effect　while　injecting　and　to　make　the　actual　fabrication　process　behind　convenient,　5000　angstrom　SiO2　was　deposited　on　the　surface　of　the　wafer.　Photoresist　and　Au　are　used　as　the　mask　to　protect　the　lasing　area　against　bombardment,　respectively.　When　the　aperture　diameters　is　10　mu　m　and　under　the　two　times　bombardment,　the　output　power　of　continuously　at　room　temperature　is　reached　at　2.4mw,　while　the　same　aperture　diameters　under　three　times　bombardment　is　only　0.5mw.　Further　analysis　indicates　that　the　distance　of　injection　peak　value　from　the　active　region　is　a　critical　parameter　to　determine　the　output　power.