In　this　paper,　the　effects　of　substrate　temperature　during　film　growth　at　relative　high　temperature　have　been　reported.　The　IGZO　thin　films　were　fabricated　by　means　of　pulse　laser　deposition　(PLD)　with　the　InGaZnO　(In2O3:Ga2O3:ZnO=1:1:8　mol　%)　target.　The　substrate　temperature　altered　from　room　temperature　(RT)　to　800　degrees　C.　The　product　thin　films　were　characterized　rigorously　by　X-ray　diffraction　(XRD),　atomic　force　microscopy　(AFM),　UV-VIS　spectrometer,　Hall-effect　investigation　and　X-ray　photoelectron　spectroscopy　(XPS).　The　IGZO　films　was　with　smooth　surface,　high　transmission　in　the　visible　spectral　range　(about　75-92　%),　carrier　mobility　＞　8.0　cm(2)/(V.s)　and　carrier　concentration　at　about　10(18)　cm(-3).　Finally,　the　character　changes　influenced　by　temperature　were　obtained　from　analysis　results.　This　task　may　benefit　to　a　flat　panel　display　in　the　process　of　thin　film　transistors(TFT)　fabrications　and　improvements.