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作者:

Su, Xueqiong (Su, Xueqiong.) | Wang, Li (Wang, Li.) (学者:王丽) | Chen, Jiangbo (Chen, Jiangbo.) | Wan, Xiaojing (Wan, Xiaojing.) | Kong, Le (Kong, Le.)

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摘要:

Zn0.9Co0.1O bulks were prepared by solid state reaction at various fritting temperatures in order to investigate the structural and optical properties of the bulks. The valence electron and doping concentration in bulk was measured by Xray photoelectron spectroscopy (XPS) instrument. Some basic properties of the bulk material in powder were examined to enhance the comprehension of magnetism in these semiconductors. The corresponding magnetic properties were evaluated by field-cooling and zero-field-cooling magnetization measurements, while the optical properties were tested by Fourier transformed infrared spectrum (FTIR). It is indcated that Co ions are well inserted in the ZnO structure and surrounded by four oxygen. It means that a series of Co have substituted Zn and the sample all the same maintains original wurtzite structure in lattice with a sintered temperature of 1200 degrees C, then it leads to chemical bond formation of Co-O. Furthermore, the fritting temperature do not play a crucial role in the determination of Co content.

关键词:

diluted magnetic semiconductors FTIR M-T solid state reaction XPS Zn0.9Co0.1O

作者机构:

  • [ 1 ] [Su, Xueqiong]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Li]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 3 ] [Chen, Jiangbo]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 4 ] [Wan, Xiaojing]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 5 ] [Kong, Le]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

通讯作者信息:

  • 王丽

    [Wang, Li]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

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来源 :

5TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES FOR DETECTOR, IMAGER, DISPLAY, AND ENERGY CONVERSION TECHNOLOGY

ISSN: 0277-786X

年份: 2010

卷: 7658

语种: 英文

被引次数:

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