In　this　paper,　the　buffer　interlayer　was　formed　by　first　depositing　a　pure　nickel　layer　on　the　p-type　Si　(100)　substrate,　and　then　the　boron　nitride　thin　films　were　deposited　by　using　radio　frequency　magnetron　sputter.　We　used　the　purity　of　99.99　%　nickel　and　purity　of　99.99　%　boron　nitride　(h-BN)　as　targets　in　the　experiment.　Step　profiler　has　been　employed　to　measure　the　thickness　of　nickel　interlayer　and　cubic　boron　nitride　thin　films.　Fourier　transformed　infrared　spectroscopy　(FTIR)　has　been　employed　to　characterize　boron　nitride　thin　films.　The　content　of　cubic　phase　boron　nitride　in　the　films　has　been　calculated　through　the　FTIR　spectra.　The　surface　morphology　and　the　grain　size　of　films　were　examined　using　an　atomic　force　microscope　(AFM).　The　mixture　gas　of　argon　and　nitrogen　was　as　the　working　gas　in　our　experiment.　To　study　the　thickness　of　nickel　interlayer　how　to　influence　the　formation　of　cubic　phase　in　the　boron　nitride　thin　film,　we　changed　the　thickness　of　nickel　interlayer　by　controlling　the　sputtering　time　with　the　same　substrate　temperature,　working　gas　pressure　and　other　conditions.　The　results　showed　that　the　thickness　of　nickel　interlayer　is　the　key　factor　in　the　formation　of　cubic　boron　nitride.　The　growth　of　cubic　boron　nitride　at　room　temperature　can　be　realized　by　appropriately　selecting　the　thickness　of　nickel　interlayer.　We　also　drew　out　when　the　thickness　of　nickel　interlayer　was　about　150nm,　the　content　of　cubic　phase　in　boron　nitride　thin　films　would　get　up　to　the　highest.　On　this　basis　of　these　results,　we　also　examined　impacts　of　the　substrate　temperature　(100　similar　to　400　degrees　C),　substrate　bias　(50　similar　to　210　V)　and　annealing　conditions　on　the　formation　of　the　cubic　boron　nitride　thin　films.