The　microcrystalline　silicon　films　in　the　phase　transition　regime　from　amorphous　to　microcrystalline　were　fabricated　by　microwave　electron-cyclotron-resonance　chemical　vapor　deposition　(MWECR　CVD)　system.　The　influence　of　deposition　temperature　and　deposition　pressure　on　the　structure　and　electrical　properties　of　microcrystalline　silicon　films　was　investigated.　It　is　shown　that　the　films　in　the　phase　transition　regime　from　amorphous　to　microcrystalline　are　easier　to　fabricate　under　the　condition　of　lower　deposition　pressure　and　higher　substrate　temperature.　For　example,　the　films　in　the　phase　transition　regime　whose　crystalline　volume　fraction　is　about　30　%,　were　deposited　at　substrate　temperature　of　170　degrees　C　and　deposition　pressure　of　0.7　Pa.　The　films　mu　tau　product　is　about　the　order　of　magnitude　of　10(-5),　whose　magnitude　is　two　order　higher　than　that　of　amorphous　silicon　films,　and　their　photosensitivity　is　about　10(3)similar　to　10(4).　Therefore,　having　both　high　stability　and　excellent　optoelectric　properties　of　the　high-quality　and　device　grade　film,　it　is　suitable　to　fabricate　the　intrinsic　materials　for　amorphous　silicon　based　solar　cells.